SEMI OpenIR  > 中科院半导体材料科学重点实验室
Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire
Wang, HT; Jia, CH; Xu, JK; Chen, YH; Chen, XW; Zhang, WF
2014
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume391Pages:111-115
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26365
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang, HT,Jia, CH,Xu, JK,et al. Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire[J]. JOURNAL OF CRYSTAL GROWTH,2014,391:111-115.
APA Wang, HT,Jia, CH,Xu, JK,Chen, YH,Chen, XW,&Zhang, WF.(2014).Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire.JOURNAL OF CRYSTAL GROWTH,391,111-115.
MLA Wang, HT,et al."Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire".JOURNAL OF CRYSTAL GROWTH 391(2014):111-115.
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