SEMI OpenIR  > 中科院半导体材料科学重点实验室
Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors
Ding, K; Wang, CY; Zhang, BT; Zhang, Y; Guan, M; Cui, LJ; Zhang, YW; Zeng, YP; Lin, Z; Huang, F
2014
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume35Issue:3Pages:333-335
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26353
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ding, K,Wang, CY,Zhang, BT,et al. Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2014,35(3):333-335.
APA Ding, K.,Wang, CY.,Zhang, BT.,Zhang, Y.,Guan, M.,...&Huang, F.(2014).Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors.IEEE ELECTRON DEVICE LETTERS,35(3),333-335.
MLA Ding, K,et al."Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors".IEEE ELECTRON DEVICE LETTERS 35.3(2014):333-335.
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