SEMI OpenIR  > 中科院半导体材料科学重点实验室
Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting
Liu, K; Qu, SC; Zhang, XH; Tan, FR; Bi, Y; Lu, SD; Wang, ZG
2014
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume114Issue:3Pages:765-768
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26352
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu, K,Qu, SC,Zhang, XH,et al. Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,114(3):765-768.
APA Liu, K.,Qu, SC.,Zhang, XH.,Tan, FR.,Bi, Y.,...&Wang, ZG.(2014).Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,114(3),765-768.
MLA Liu, K,et al."Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 114.3(2014):765-768.
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