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Annealing studies of boron implanted emitters for n-silicon solar cells
Liang, P; Han, PD; Fan, YJ; Xing, YP
2014
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume29Issue:3Pages:035011
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26351
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Liang, P,Han, PD,Fan, YJ,et al. Annealing studies of boron implanted emitters for n-silicon solar cells[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2014,29(3):035011.
APA Liang, P,Han, PD,Fan, YJ,&Xing, YP.(2014).Annealing studies of boron implanted emitters for n-silicon solar cells.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,29(3),035011.
MLA Liang, P,et al."Annealing studies of boron implanted emitters for n-silicon solar cells".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 29.3(2014):035011.
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