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Electron transport characteristics of silicon nanowires by metal-assisted chemical etching
Qi, YY; Wang, Z; Zhang, ML; Wang, XD; Ji, A; Yang, FH
2014
Source PublicationAIP ADVANCES
Volume4Issue:3Pages:031307
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26349
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Qi, YY,Wang, Z,Zhang, ML,et al. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching[J]. AIP ADVANCES,2014,4(3):031307.
APA Qi, YY,Wang, Z,Zhang, ML,Wang, XD,Ji, A,&Yang, FH.(2014).Electron transport characteristics of silicon nanowires by metal-assisted chemical etching.AIP ADVANCES,4(3),031307.
MLA Qi, YY,et al."Electron transport characteristics of silicon nanowires by metal-assisted chemical etching".AIP ADVANCES 4.3(2014):031307.
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