| Electron transport characteristics of silicon nanowires by metal-assisted chemical etching | |
| Qi, YY; Wang, Z; Zhang, ML; Wang, XD; Ji, A; Yang, FH | |
| 2014 | |
| Source Publication | AIP ADVANCES
 |
| Volume | 4Issue:3Pages:031307 |
| Subject Area | 微电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-04-02 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26349 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | Qi, YY,Wang, Z,Zhang, ML,et al. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching[J]. AIP ADVANCES,2014,4(3):031307. |
| APA | Qi, YY,Wang, Z,Zhang, ML,Wang, XD,Ji, A,&Yang, FH.(2014).Electron transport characteristics of silicon nanowires by metal-assisted chemical etching.AIP ADVANCES,4(3),031307. |
| MLA | Qi, YY,et al."Electron transport characteristics of silicon nanowires by metal-assisted chemical etching".AIP ADVANCES 4.3(2014):031307. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Electron transport c（714KB） | 限制开放 | License | Application Full Text | |||
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