Electron transport characteristics of silicon nanowires by metal-assisted chemical etching | |
Qi, YY; Wang, Z; Zhang, ML; Wang, XD; Ji, A; Yang, FH | |
2014 | |
Source Publication | AIP ADVANCES
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Volume | 4Issue:3Pages:031307 |
Subject Area | 微电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-04-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26349 |
Collection | 半导体集成技术工程研究中心 |
Recommended Citation GB/T 7714 | Qi, YY,Wang, Z,Zhang, ML,et al. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching[J]. AIP ADVANCES,2014,4(3):031307. |
APA | Qi, YY,Wang, Z,Zhang, ML,Wang, XD,Ji, A,&Yang, FH.(2014).Electron transport characteristics of silicon nanowires by metal-assisted chemical etching.AIP ADVANCES,4(3),031307. |
MLA | Qi, YY,et al."Electron transport characteristics of silicon nanowires by metal-assisted chemical etching".AIP ADVANCES 4.3(2014):031307. |
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Electron transport c(714KB) | 限制开放 | License | Application Full Text |
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