SEMI OpenIR  > 半导体超晶格国家重点实验室
Anomalous Hall effect in epitaxial L1-Mn1.5Ga films with variable chemical ordering
Zhu, LJ; Pan, D; Zhao, JH
2014
Source PublicationPHYSICAL REVIEW B
Volume89Issue:22Pages:220406
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26327
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhu, LJ,Pan, D,Zhao, JH. Anomalous Hall effect in epitaxial L1-Mn1.5Ga films with variable chemical ordering[J]. PHYSICAL REVIEW B,2014,89(22):220406.
APA Zhu, LJ,Pan, D,&Zhao, JH.(2014).Anomalous Hall effect in epitaxial L1-Mn1.5Ga films with variable chemical ordering.PHYSICAL REVIEW B,89(22),220406.
MLA Zhu, LJ,et al."Anomalous Hall effect in epitaxial L1-Mn1.5Ga films with variable chemical ordering".PHYSICAL REVIEW B 89.22(2014):220406.
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