SEMI OpenIR  > 中科院半导体材料科学重点实验室
The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy
Du, WN; Yang, XG; Wang, XY; Pan, HY; Ji, HM; Luo, S; Yang, T; Wang, ZG
2014
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume396Pages:33-37
Subject Area半导体材料
Indexed BySCI
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26319
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Du, WN,Yang, XG,Wang, XY,et al. The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2014,396:33-37.
APA Du, WN.,Yang, XG.,Wang, XY.,Pan, HY.,Ji, HM.,...&Wang, ZG.(2014).The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,396,33-37.
MLA Du, WN,et al."The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 396(2014):33-37.
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