| The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy | |
| Du, WN; Yang, XG; Wang, XY; Pan, HY; Ji, HM; Luo, S; Yang, T; Wang, ZG | |
| 2014 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| Volume | 396Pages:33-37 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2015-04-02 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26319 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Du, WN,Yang, XG,Wang, XY,et al. The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2014,396:33-37. |
| APA | Du, WN.,Yang, XG.,Wang, XY.,Pan, HY.,Ji, HM.,...&Wang, ZG.(2014).The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,396,33-37. |
| MLA | Du, WN,et al."The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 396(2014):33-37. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The self-seeded grow（1747KB） | 限制开放 | License | Application Full Text | |||
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