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Magnetic field controllable nonvolatile resistive switching effect in silicon device
Wang, JM; Zhang, XZ; Piao, HG; Luo, ZC; Xiong, CY; Wang, XF; Yang, FH
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume104Issue:24Pages:243511
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26317
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Wang, JM,Zhang, XZ,Piao, HG,et al. Magnetic field controllable nonvolatile resistive switching effect in silicon device[J]. APPLIED PHYSICS LETTERS,2014,104(24):243511.
APA Wang, JM.,Zhang, XZ.,Piao, HG.,Luo, ZC.,Xiong, CY.,...&Yang, FH.(2014).Magnetic field controllable nonvolatile resistive switching effect in silicon device.APPLIED PHYSICS LETTERS,104(24),243511.
MLA Wang, JM,et al."Magnetic field controllable nonvolatile resistive switching effect in silicon device".APPLIED PHYSICS LETTERS 104.24(2014):243511.
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