| Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers | |
| Yang, YJ; Wang, JX; Li, JM; Zeng, YP | |
| 2014 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 115Issue:23Pages:233102 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-04-02 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26311 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Yang, YJ,Wang, JX,Li, JM,et al. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers[J]. JOURNAL OF APPLIED PHYSICS,2014,115(23):233102. |
| APA | Yang, YJ,Wang, JX,Li, JM,&Zeng, YP.(2014).Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers.JOURNAL OF APPLIED PHYSICS,115(23),233102. |
| MLA | Yang, YJ,et al."Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers".JOURNAL OF APPLIED PHYSICS 115.23(2014):233102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Analysis of InGaN li（2029KB） | 限制开放 | License | Application Full Text | |||
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