SEMI OpenIR  > 中科院半导体材料科学重点实验室
Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers
Yang, YJ; Wang, JX; Li, JM; Zeng, YP
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume115Issue:23Pages:233102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26311
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yang, YJ,Wang, JX,Li, JM,et al. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers[J]. JOURNAL OF APPLIED PHYSICS,2014,115(23):233102.
APA Yang, YJ,Wang, JX,Li, JM,&Zeng, YP.(2014).Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers.JOURNAL OF APPLIED PHYSICS,115(23),233102.
MLA Yang, YJ,et al."Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers".JOURNAL OF APPLIED PHYSICS 115.23(2014):233102.
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