SEMI OpenIR  > 半导体超晶格国家重点实验室
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
Hu, PG; Zhang, J; Yoon, MN; Qiao, XF; Zhang, X; Feng, W; Tan, PH; Zheng, W; Liu, JJ; Wang, XN; Idrobo, JC; Geohegan, DB; Xiao, K
2014
Source PublicationNANO RESEARCH
Volume7Issue:5Pages:694-703
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26309
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Hu, PG,Zhang, J,Yoon, MN,et al. Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap[J]. NANO RESEARCH,2014,7(5):694-703.
APA Hu, PG.,Zhang, J.,Yoon, MN.,Qiao, XF.,Zhang, X.,...&Xiao, K.(2014).Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap.NANO RESEARCH,7(5),694-703.
MLA Hu, PG,et al."Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap".NANO RESEARCH 7.5(2014):694-703.
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