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Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes
Ji, XL; Wei, TB; Yang, FH; Lu, HX; Wei, XC; Ma, P; Yi, XY; Wang, JX; Zeng, YP; Wang, GH; Li, JM
2014
Source PublicationOPTICS EXPRESS
Volume22Issue:9Pages:A1001-A1008
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26308
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Ji, XL,Wei, TB,Yang, FH,et al. Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes[J]. OPTICS EXPRESS,2014,22(9):A1001-A1008.
APA Ji, XL.,Wei, TB.,Yang, FH.,Lu, HX.,Wei, XC.,...&Li, JM.(2014).Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes.OPTICS EXPRESS,22(9),A1001-A1008.
MLA Ji, XL,et al."Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes".OPTICS EXPRESS 22.9(2014):A1001-A1008.
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