SEMI OpenIR  > 半导体超晶格国家重点实验室
High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors
Yang, SX; Tongay, S; Yue, Q; Li, YT; Li, B; Lu, FY
2014
Source PublicationSCIENTIFIC REPORTS
Volume4Pages:5442
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26304
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yang, SX,Tongay, S,Yue, Q,et al. High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors[J]. SCIENTIFIC REPORTS,2014,4:5442.
APA Yang, SX,Tongay, S,Yue, Q,Li, YT,Li, B,&Lu, FY.(2014).High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors.SCIENTIFIC REPORTS,4,5442.
MLA Yang, SX,et al."High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors".SCIENTIFIC REPORTS 4(2014):5442.
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