SEMI OpenIR  > 中科院半导体材料科学重点实验室
Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid
Duan, JX; Tang, N; He, X; Shen, B; Yan, Y; Zhang, S; Qin, XD; Wang, XQ; Yang, XL; Xu, FJ; Chen, YH; Ge, WK
2014
Source PublicationSCIENTIFIC REPORTS
Volume4Pages:4889
Subject Area半导体材料
Indexed BySCI
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26302
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Duan, JX,Tang, N,He, X,et al. Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid[J]. SCIENTIFIC REPORTS,2014,4:4889.
APA Duan, JX.,Tang, N.,He, X.,Shen, B.,Yan, Y.,...&Ge, WK.(2014).Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid.SCIENTIFIC REPORTS,4,4889.
MLA Duan, JX,et al."Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid".SCIENTIFIC REPORTS 4(2014):4889.
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