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Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides
Jiang, XW; Li, SS
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume104Issue:19Pages:193510
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26300
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jiang, XW,Li, SS. Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides[J]. APPLIED PHYSICS LETTERS,2014,104(19):193510.
APA Jiang, XW,&Li, SS.(2014).Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides.APPLIED PHYSICS LETTERS,104(19),193510.
MLA Jiang, XW,et al."Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides".APPLIED PHYSICS LETTERS 104.19(2014):193510.
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