SEMI OpenIR  > 中科院半导体照明研发中心
Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays
Zhang, YH; Wei, TB; Wang, JX; Fan, C; Chen, Y; Hu, Q; Li, JM
2014
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume394Pages:7-10
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26291
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhang, YH,Wei, TB,Wang, JX,et al. Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays[J]. JOURNAL OF CRYSTAL GROWTH,2014,394:7-10.
APA Zhang, YH.,Wei, TB.,Wang, JX.,Fan, C.,Chen, Y.,...&Li, JM.(2014).Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays.JOURNAL OF CRYSTAL GROWTH,394,7-10.
MLA Zhang, YH,et al."Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays".JOURNAL OF CRYSTAL GROWTH 394(2014):7-10.
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