| Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays | |
| Zhang, YH; Wei, TB; Wang, JX; Fan, C; Chen, Y; Hu, Q; Li, JM | |
| 2014 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| Volume | 394Pages:7-10 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-04-02 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26291 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Zhang, YH,Wei, TB,Wang, JX,et al. Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays[J]. JOURNAL OF CRYSTAL GROWTH,2014,394:7-10. |
| APA | Zhang, YH.,Wei, TB.,Wang, JX.,Fan, C.,Chen, Y.,...&Li, JM.(2014).Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays.JOURNAL OF CRYSTAL GROWTH,394,7-10. |
| MLA | Zhang, YH,et al."Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays".JOURNAL OF CRYSTAL GROWTH 394(2014):7-10. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Efficiency improveme（2257KB） | 限制开放 | License | Application Full Text | |||
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