SEMI OpenIR  > 半导体超晶格国家重点实验室
InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates
Emel; Kokhanenko, AP; Abramkin, DS; Pchelyakov, OP; Putyato, MA; Semyagin, BR; Preobrazhenskii, VV; Vasilenko, AP; Feklin, DF; Niu, ZC; Ni, HQ
2014
Source PublicationRUSSIAN PHYSICS JOURNAL
Volume57Issue:3Pages:359-363
Subject Area半导体物理
Indexed BySCI
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26287
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Emel,Kokhanenko, AP,Abramkin, DS,et al. InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates[J]. RUSSIAN PHYSICS JOURNAL,2014,57(3):359-363.
APA Emel.,Kokhanenko, AP.,Abramkin, DS.,Pchelyakov, OP.,Putyato, MA.,...&Ni, HQ.(2014).InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates.RUSSIAN PHYSICS JOURNAL,57(3),359-363.
MLA Emel,et al."InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates".RUSSIAN PHYSICS JOURNAL 57.3(2014):359-363.
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