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Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers
Yang, YJ; Zeng, YP
2014
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume116Issue:4Pages:1757-1760
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26281
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yang, YJ,Zeng, YP. Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,116(4):1757-1760.
APA Yang, YJ,&Zeng, YP.(2014).Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,116(4),1757-1760.
MLA Yang, YJ,et al."Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 116.4(2014):1757-1760.
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