| Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals | |
| Wei, TB; Huo, ZQ; Zhang, YH; Zheng, HY; Chen, Y; Yang, JK; Hu, Q; Duan, RF; Wang, JX; Zeng, YP; Li, JM | |
| 2014 | |
| Source Publication | OPTICS EXPRESS
 |
| Volume | 22Issue:13Pages:A1093-A1100 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26276 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Wei, TB,Huo, ZQ,Zhang, YH,et al. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals[J]. OPTICS EXPRESS,2014,22(13):A1093-A1100. |
| APA | Wei, TB.,Huo, ZQ.,Zhang, YH.,Zheng, HY.,Chen, Y.,...&Li, JM.(2014).Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals.OPTICS EXPRESS,22(13),A1093-A1100. |
| MLA | Wei, TB,et al."Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals".OPTICS EXPRESS 22.13(2014):A1093-A1100. |
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| Efficiency enhanceme（1KB） | 限制开放 | License | Application Full Text | |||
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