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Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals
Wei, TB; Huo, ZQ; Zhang, YH; Zheng, HY; Chen, Y; Yang, JK; Hu, Q; Duan, RF; Wang, JX; Zeng, YP; Li, JM
2014
Source PublicationOPTICS EXPRESS
Volume22Issue:13Pages:A1093-A1100
Subject Area半导体器件
Indexed BySCI
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26276
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wei, TB,Huo, ZQ,Zhang, YH,et al. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals[J]. OPTICS EXPRESS,2014,22(13):A1093-A1100.
APA Wei, TB.,Huo, ZQ.,Zhang, YH.,Zheng, HY.,Chen, Y.,...&Li, JM.(2014).Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals.OPTICS EXPRESS,22(13),A1093-A1100.
MLA Wei, TB,et al."Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals".OPTICS EXPRESS 22.13(2014):A1093-A1100.
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