Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes | |
Le, LC; Zhao, DG; Jiang, DS; Yang, H; Chen, P; Liu, ZS; Yang, J; He, XG; Li, XJ; Liu, JP; Zhu, JJ; Zhang, SM | |
2014 | |
Source Publication | OPTICS EXPRESS
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Volume | 22Issue:10Pages:11392-11398 |
Subject Area | 光电子学 |
Indexed By | SCI |
Date Available | 2015-03-25 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26275 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Le, LC,Zhao, DG,Jiang, DS,et al. Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes[J]. OPTICS EXPRESS,2014,22(10):11392-11398. |
APA | Le, LC.,Zhao, DG.,Jiang, DS.,Yang, H.,Chen, P.,...&Zhang, SM.(2014).Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.OPTICS EXPRESS,22(10),11392-11398. |
MLA | Le, LC,et al."Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes".OPTICS EXPRESS 22.10(2014):11392-11398. |
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Suppression of elect(485KB) | 限制开放 | License | Application Full Text |
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