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Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes
Le, LC; Zhao, DG; Jiang, DS; Yang, H; Chen, P; Liu, ZS; Yang, J; He, XG; Li, XJ; Liu, JP; Zhu, JJ; Zhang, SM
2014
Source PublicationOPTICS EXPRESS
Volume22Issue:10Pages:11392-11398
Subject Area光电子学
Indexed BySCI
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26275
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Le, LC,Zhao, DG,Jiang, DS,et al. Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes[J]. OPTICS EXPRESS,2014,22(10):11392-11398.
APA Le, LC.,Zhao, DG.,Jiang, DS.,Yang, H.,Chen, P.,...&Zhang, SM.(2014).Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.OPTICS EXPRESS,22(10),11392-11398.
MLA Le, LC,et al."Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes".OPTICS EXPRESS 22.10(2014):11392-11398.
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