| Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes | |
| Le, LC; Zhao, DG; Jiang, DS; Yang, H; Chen, P; Liu, ZS; Yang, J; He, XG; Li, XJ; Liu, JP; Zhu, JJ; Zhang, SM | |
| 2014 | |
| Source Publication | OPTICS EXPRESS
 |
| Volume | 22Issue:10Pages:11392-11398 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26275 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Le, LC,Zhao, DG,Jiang, DS,et al. Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes[J]. OPTICS EXPRESS,2014,22(10):11392-11398. |
| APA | Le, LC.,Zhao, DG.,Jiang, DS.,Yang, H.,Chen, P.,...&Zhang, SM.(2014).Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.OPTICS EXPRESS,22(10),11392-11398. |
| MLA | Le, LC,et al."Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes".OPTICS EXPRESS 22.10(2014):11392-11398. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Suppression of elect（485KB） | 限制开放 | License | Application Full Text | |||
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