SEMI OpenIR  > 半导体超晶格国家重点实验室
Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection
Zhang, LX; Sun, WG; Xu, YQ; Zhang, L; Si, JJ
2014
Source PublicationINFRARED PHYSICS & TECHNOLOGY
Volume65Pages:129-133
Subject Area半导体物理
Indexed BySCI
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26269
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhang, LX,Sun, WG,Xu, YQ,et al. Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection[J]. INFRARED PHYSICS & TECHNOLOGY,2014,65:129-133.
APA Zhang, LX,Sun, WG,Xu, YQ,Zhang, L,&Si, JJ.(2014).Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection.INFRARED PHYSICS & TECHNOLOGY,65,129-133.
MLA Zhang, LX,et al."Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection".INFRARED PHYSICS & TECHNOLOGY 65(2014):129-133.
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