SEMI OpenIR  > 半导体超晶格国家重点实验室
Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices
Cao, YF; Cai, KM; Li, LJ; Lu, WJ; Sun, YP; Wang, KY
2014
Source PublicationCHINESE PHYSICS LETTERS
Volume31Issue:7Pages:077203
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26267
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Cao, YF,Cai, KM,Li, LJ,et al. Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices[J]. CHINESE PHYSICS LETTERS,2014,31(7):077203.
APA Cao, YF,Cai, KM,Li, LJ,Lu, WJ,Sun, YP,&Wang, KY.(2014).Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices.CHINESE PHYSICS LETTERS,31(7),077203.
MLA Cao, YF,et al."Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices".CHINESE PHYSICS LETTERS 31.7(2014):077203.
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