Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices

	Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices
	Cao, YF; Cai, KM; Li, LJ; Lu, WJ; Sun, YP; Wang, KY
	2014
Source Publication	CHINESE PHYSICS LETTERS
Volume	31 Issue:7 Pages:077203
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2015-03-25
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/26267
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Cao, YF,Cai, KM,Li, LJ,et al. Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices[J]. CHINESE PHYSICS LETTERS,2014,31(7):077203.
APA	Cao, YF,Cai, KM,Li, LJ,Lu, WJ,Sun, YP,&Wang, KY.(2014).Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices.CHINESE PHYSICS LETTERS,31(7),077203.
MLA	Cao, YF,et al."Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices".CHINESE PHYSICS LETTERS 31.7(2014):077203.

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