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Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices | |
Cao, YF; Cai, KM; Li, LJ; Lu, WJ; Sun, YP; Wang, KY | |
2014 | |
Source Publication | CHINESE PHYSICS LETTERS
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Volume | 31Issue:7Pages:077203 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-25 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26267 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Cao, YF,Cai, KM,Li, LJ,et al. Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices[J]. CHINESE PHYSICS LETTERS,2014,31(7):077203. |
APA | Cao, YF,Cai, KM,Li, LJ,Lu, WJ,Sun, YP,&Wang, KY.(2014).Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices.CHINESE PHYSICS LETTERS,31(7),077203. |
MLA | Cao, YF,et al."Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices".CHINESE PHYSICS LETTERS 31.7(2014):077203. |
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Transport and Capaci(854KB) | 限制开放 | License | Application Full Text |
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