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Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers
Yang, YJ; Zeng, YP
2014
Source PublicationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume211Issue:7Pages:1640-1644
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26261
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yang, YJ,Zeng, YP. Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2014,211(7):1640-1644.
APA Yang, YJ,&Zeng, YP.(2014).Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,211(7),1640-1644.
MLA Yang, YJ,et al."Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211.7(2014):1640-1644.
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