Knowledge Management System Of Institute of Semiconductors,CAS
In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots | |
Wu, XF; Wei, H; Dou, XM; He, LX; Sun, BQ; Ding, K; Yu, Y; Ni, HQ; Niu, ZC; Ji, Y; Li, SS; Jiang, DS; Guo, GC | |
2014 | |
Source Publication | EPL
![]() |
Volume | 107Issue:2Pages:27008 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-25 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26257 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Wu, XF,Wei, H,Dou, XM,et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots[J]. EPL,2014,107(2):27008. |
APA | Wu, XF.,Wei, H.,Dou, XM.,He, LX.,Sun, BQ.,...&Guo, GC.(2014).In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots.EPL,107(2),27008. |
MLA | Wu, XF,et al."In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots".EPL 107.2(2014):27008. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
In situ tuning biexc(407KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment