In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots

	In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots
	Wu, XF; Wei, H; Dou, XM; He, LX; Sun, BQ; Ding, K; Yu, Y; Ni, HQ; Niu, ZC; Ji, Y; Li, SS; Jiang, DS; Guo, GC
	2014
Source Publication	EPL
Volume	107 Issue:2 Pages:27008
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2015-03-25
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/26257
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Wu, XF,Wei, H,Dou, XM,et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots[J]. EPL,2014,107(2):27008.
APA	Wu, XF.,Wei, H.,Dou, XM.,He, LX.,Sun, BQ.,...&Guo, GC.(2014).In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots.EPL,107(2),27008.
MLA	Wu, XF,et al."In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots".EPL 107.2(2014):27008.

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