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Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography
Zhang, YH; Wei, TB; Xiong, Z; Shang, L; Tian, YD; Zhao, Y; Zhou, PY; Wang, JX; Li, JM
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume105Issue:1Pages:013108
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26256
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhang, YH,Wei, TB,Xiong, Z,et al. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography[J]. APPLIED PHYSICS LETTERS,2014,105(1):013108.
APA Zhang, YH.,Wei, TB.,Xiong, Z.,Shang, L.,Tian, YD.,...&Li, JM.(2014).Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography.APPLIED PHYSICS LETTERS,105(1),013108.
MLA Zhang, YH,et al."Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography".APPLIED PHYSICS LETTERS 105.1(2014):013108.
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