SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical
Wang, WY; Jin, P; Liu, GP; Li, W; Liu, B; Liu, XF; Wang, ZG
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:8Pages:087810
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26246
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang, WY,Jin, P,Liu, GP,et al. Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical[J]. CHINESE PHYSICS B,2014,23(8):087810.
APA Wang, WY.,Jin, P.,Liu, GP.,Li, W.,Liu, B.,...&Wang, ZG.(2014).Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical.CHINESE PHYSICS B,23(8),087810.
MLA Wang, WY,et al."Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical".CHINESE PHYSICS B 23.8(2014):087810.
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