Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical | |
Wang, WY; Jin, P; Liu, GP; Li, W; Liu, B; Liu, XF; Wang, ZG | |
2014 | |
Source Publication | CHINESE PHYSICS B
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Volume | 23Issue:8Pages:087810 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-25 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26246 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Wang, WY,Jin, P,Liu, GP,et al. Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical[J]. CHINESE PHYSICS B,2014,23(8):087810. |
APA | Wang, WY.,Jin, P.,Liu, GP.,Li, W.,Liu, B.,...&Wang, ZG.(2014).Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical.CHINESE PHYSICS B,23(8),087810. |
MLA | Wang, WY,et al."Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical".CHINESE PHYSICS B 23.8(2014):087810. |
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