SEMI OpenIR  > 半导体超晶格国家重点实验室
Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators
Zhang, YY; Shen, M; An, XT; Sun, QF; Xie, XC; Chang, K; Li, SS
2014
Source PublicationPHYSICAL REVIEW B
Volume90Issue:5Pages:054205
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26231
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhang, YY,Shen, M,An, XT,et al. Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators[J]. PHYSICAL REVIEW B,2014,90(5):054205.
APA Zhang, YY.,Shen, M.,An, XT.,Sun, QF.,Xie, XC.,...&Li, SS.(2014).Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators.PHYSICAL REVIEW B,90(5),054205.
MLA Zhang, YY,et al."Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators".PHYSICAL REVIEW B 90.5(2014):054205.
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