SEMI OpenIR  > 中科院半导体材料科学重点实验室
Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor
Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG
2014
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume605Pages:113-117
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26226
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, W,Wang, XL,Qu, SQ,et al. Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2014,605:113-117.
APA Li, W.,Wang, XL.,Qu, SQ.,Wang, Q.,Xiao, HL.,...&Wang, ZG.(2014).Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor.JOURNAL OF ALLOYS AND COMPOUNDS,605,113-117.
MLA Li, W,et al."Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor".JOURNAL OF ALLOYS AND COMPOUNDS 605(2014):113-117.
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