SEMI OpenIR  > 半导体超晶格国家重点实验室
Transport in a quantum spin Hall bar: Effect of in-plane magnetic field
Cheng, F; Lin, LZ; Zhang, D
2014
Source PublicationSOLID STATE COMMUNICATIONS
Volume188Pages:45-48
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26222
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Cheng, F,Lin, LZ,Zhang, D. Transport in a quantum spin Hall bar: Effect of in-plane magnetic field[J]. SOLID STATE COMMUNICATIONS,2014,188:45-48.
APA Cheng, F,Lin, LZ,&Zhang, D.(2014).Transport in a quantum spin Hall bar: Effect of in-plane magnetic field.SOLID STATE COMMUNICATIONS,188,45-48.
MLA Cheng, F,et al."Transport in a quantum spin Hall bar: Effect of in-plane magnetic field".SOLID STATE COMMUNICATIONS 188(2014):45-48.
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