SEMI OpenIR  > 中科院半导体材料科学重点实验室
Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes
Yang, YJ; Zeng, YP
2014
Source PublicationOPTICS COMMUNICATIONS
Volume326Pages:121-125
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26218
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yang, YJ,Zeng, YP. Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes[J]. OPTICS COMMUNICATIONS,2014,326:121-125.
APA Yang, YJ,&Zeng, YP.(2014).Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes.OPTICS COMMUNICATIONS,326,121-125.
MLA Yang, YJ,et al."Enhancement of hole injection with Mg-Si-codoped barriers in InGaN-based light-emitting diodes".OPTICS COMMUNICATIONS 326(2014):121-125.
Files in This Item:
File Name/Size DocType Version Access License
Enhancement of hole (1427KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yang, YJ]'s Articles
[Zeng, YP]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yang, YJ]'s Articles
[Zeng, YP]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yang, YJ]'s Articles
[Zeng, YP]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.