SEMI OpenIR  > 中科院半导体材料科学重点实验室
Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD
Wang, XY; Yang, XG; Du, WN; Ji, HM; Luo, S; Yang, T
2014
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume395Pages:55-60
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26213
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang, XY,Yang, XG,Du, WN,et al. Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD[J]. JOURNAL OF CRYSTAL GROWTH,2014,395:55-60.
APA Wang, XY,Yang, XG,Du, WN,Ji, HM,Luo, S,&Yang, T.(2014).Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD.JOURNAL OF CRYSTAL GROWTH,395,55-60.
MLA Wang, XY,et al."Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD".JOURNAL OF CRYSTAL GROWTH 395(2014):55-60.
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