| AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency | |
| Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX; Yan, QF; He, CG; Qin, ZX; Li, JM | |
| 2014 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| Volume | 395Pages:9-13 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26207 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Dong, P,Yan, JC,Zhang, Y,et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency[J]. JOURNAL OF CRYSTAL GROWTH,2014,395:9-13. |
| APA | Dong, P.,Yan, JC.,Zhang, Y.,Wang, JX.,Zeng, JP.,...&Li, JM.(2014).AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency.JOURNAL OF CRYSTAL GROWTH,395,9-13. |
| MLA | Dong, P,et al."AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency".JOURNAL OF CRYSTAL GROWTH 395(2014):9-13. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| AlGaN-based deep ult（2410KB） | 限制开放 | License | Application Full Text | |||
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