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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX; Yan, QF; He, CG; Qin, ZX; Li, JM
2014
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume395Pages:9-13
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26207
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Dong, P,Yan, JC,Zhang, Y,et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency[J]. JOURNAL OF CRYSTAL GROWTH,2014,395:9-13.
APA Dong, P.,Yan, JC.,Zhang, Y.,Wang, JX.,Zeng, JP.,...&Li, JM.(2014).AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency.JOURNAL OF CRYSTAL GROWTH,395,9-13.
MLA Dong, P,et al."AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency".JOURNAL OF CRYSTAL GROWTH 395(2014):9-13.
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