AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency | |
Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX; Yan, QF; He, CG; Qin, ZX; Li, JM | |
2014 | |
Source Publication | JOURNAL OF CRYSTAL GROWTH
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Volume | 395Pages:9-13 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-25 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26207 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Dong, P,Yan, JC,Zhang, Y,et al. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency[J]. JOURNAL OF CRYSTAL GROWTH,2014,395:9-13. |
APA | Dong, P.,Yan, JC.,Zhang, Y.,Wang, JX.,Zeng, JP.,...&Li, JM.(2014).AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency.JOURNAL OF CRYSTAL GROWTH,395,9-13. |
MLA | Dong, P,et al."AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency".JOURNAL OF CRYSTAL GROWTH 395(2014):9-13. |
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