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Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells
Yang, J; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Le, LC; He, XG; Li, XJ; Yang, H
2014
Source PublicationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume211Issue:9Pages:2157-2160
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26200
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yang, J,Zhao, DG,Jiang, DS,et al. Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2014,211(9):2157-2160.
APA Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Yang, H.(2014).Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,211(9),2157-2160.
MLA Yang, J,et al."Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 211.9(2014):2157-2160.
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