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Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
Zeng, C; Zhang, SM; Liu, JP; Li, DY; Jiang, DS; Feng, MX; Li, ZC; Zhou, K; Wang, F; Wang, HB; Wang, H; Yang, H
2014
Source PublicationCHINESE SCIENCE BULLETIN
Volume59Issue:16Pages:1903-1906
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26197
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Zeng, C,Zhang, SM,Liu, JP,et al. Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet[J]. CHINESE SCIENCE BULLETIN,2014,59(16):1903-1906.
APA Zeng, C.,Zhang, SM.,Liu, JP.,Li, DY.,Jiang, DS.,...&Yang, H.(2014).Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet.CHINESE SCIENCE BULLETIN,59(16),1903-1906.
MLA Zeng, C,et al."Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet".CHINESE SCIENCE BULLETIN 59.16(2014):1903-1906.
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