Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices

	Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices
	Cao, YF; Li, YY; Wei, GN; Ji, Y; Wang, KY
	2014
Source Publication	SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
Volume	57 Issue:8 Pages:1471-1475
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2015-03-25
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/26194
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Cao, YF,Li, YY,Wei, GN,et al. Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2014,57(8):1471-1475.
APA	Cao, YF,Li, YY,Wei, GN,Ji, Y,&Wang, KY.(2014).Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,57(8),1471-1475.
MLA	Cao, YF,et al."Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 57.8(2014):1471-1475.

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