SEMI OpenIR  > 半导体超晶格国家重点实验室
Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices
Cao, YF; Li, YY; Wei, GN; Ji, Y; Wang, KY
2014
Source PublicationSCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
Volume57Issue:8Pages:1471-1475
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26194
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Cao, YF,Li, YY,Wei, GN,et al. Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2014,57(8):1471-1475.
APA Cao, YF,Li, YY,Wei, GN,Ji, Y,&Wang, KY.(2014).Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,57(8),1471-1475.
MLA Cao, YF,et al."Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 57.8(2014):1471-1475.
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