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Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition
He, XG; Zhao, DG; Jiang, DS; Zhu, JJ; Chen, P; Liu, ZS; Le, LC; Yang, J; Li, XJ; Zhang, SM; Yang, H
2014
Source PublicationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume32Issue:5Pages:051207
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26188
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
He, XG,Zhao, DG,Jiang, DS,et al. Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2014,32(5):051207.
APA He, XG.,Zhao, DG.,Jiang, DS.,Zhu, JJ.,Chen, P.,...&Yang, H.(2014).Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,32(5),051207.
MLA He, XG,et al."Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 32.5(2014):051207.
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