Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst | |
Zhao, Y; Wang, G; Yang, HC; An, TL; Chen, MJ; Yu, F; Tao, L; Yang, JK; Wei, TB; Duan, RF; Sun, LF | |
2014 | |
Source Publication | CHINESE PHYSICS B
![]() |
Volume | 23Issue:9Pages:096802 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-25 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26187 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Zhao, Y,Wang, G,Yang, HC,et al. Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst[J]. CHINESE PHYSICS B,2014,23(9):096802. |
APA | Zhao, Y.,Wang, G.,Yang, HC.,An, TL.,Chen, MJ.,...&Sun, LF.(2014).Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst.CHINESE PHYSICS B,23(9),096802. |
MLA | Zhao, Y,et al."Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst".CHINESE PHYSICS B 23.9(2014):096802. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Direct growth of gra(989KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment