| Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy | |
| Sang, L; Zhu, QS; Yang, SY; Liu, GP; Li, HJ; Wei, HY; Jiao, CM; Liu, SM; Wang, ZG; Zhou, XW; Mao, W; Hao, Y; Shen, B | |
| 2014 | |
| Source Publication | NANOSCALE RESEARCH LETTERS
 |
| Volume | 9Pages:470 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26179 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Sang, L,Zhu, QS,Yang, SY,et al. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy[J]. NANOSCALE RESEARCH LETTERS,2014,9:470. |
| APA | Sang, L.,Zhu, QS.,Yang, SY.,Liu, GP.,Li, HJ.,...&Shen, B.(2014).Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.NANOSCALE RESEARCH LETTERS,9,470. |
| MLA | Sang, L,et al."Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy".NANOSCALE RESEARCH LETTERS 9(2014):470. |
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| Band offsets of non-（556KB） | 限制开放 | License | Application Full Text | |||
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