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Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
He, XG; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Le, LC; Yang, J; Li, XJ; Zhang, SM; Zhu, JJ; Wang, H; Yang, H
2014
Source PublicationTHIN SOLID FILMS
Volume564Pages:135-139
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26176
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
He, XG,Zhao, DG,Jiang, DS,et al. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition[J]. THIN SOLID FILMS,2014,564:135-139.
APA He, XG.,Zhao, DG.,Jiang, DS.,Liu, ZS.,Chen, P.,...&Yang, H.(2014).Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition.THIN SOLID FILMS,564,135-139.
MLA He, XG,et al."Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition".THIN SOLID FILMS 564(2014):135-139.
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