SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes
Kang, H; Wang, Q; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Wang, XL; Wang, ZG; Hou, X
2014
Source PublicationCHINESE PHYSICS LETTERS
Volume31Issue:6Pages:068502
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26171
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Kang, H,Wang, Q,Xiao, HL,et al. High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes[J]. CHINESE PHYSICS LETTERS,2014,31(6):068502.
APA Kang, H.,Wang, Q.,Xiao, HL.,Wang, CM.,Jiang, LJ.,...&Hou, X.(2014).High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes.CHINESE PHYSICS LETTERS,31(6),068502.
MLA Kang, H,et al."High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes".CHINESE PHYSICS LETTERS 31.6(2014):068502.
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