SEMI OpenIR  > 半导体超晶格国家重点实验室
Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects
Jiang, XW; Gong, J; Xu, N; Li, SS; Zhang, JF; Hao, Y; Wang, LW
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume104Issue:2Pages:023512
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26163
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jiang, XW,Gong, J,Xu, N,et al. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects[J]. APPLIED PHYSICS LETTERS,2014,104(2):023512.
APA Jiang, XW.,Gong, J.,Xu, N.,Li, SS.,Zhang, JF.,...&Wang, LW.(2014).Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects.APPLIED PHYSICS LETTERS,104(2),023512.
MLA Jiang, XW,et al."Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects".APPLIED PHYSICS LETTERS 104.2(2014):023512.
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