| Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes | |
| Wei, TB; Ji, XL; Wu, K; Zheng, HY; Du, CX; Chen, Y; Yan, QF; Zhao, LX; Zhou, Z; Wang, JX; Li, JM | |
| 2014 | |
| Source Publication | OPTICS LETTERS
 |
| Volume | 39Issue:2Pages:379-382 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26161 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Wei, TB,Ji, XL,Wu, K,et al. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes[J]. OPTICS LETTERS,2014,39(2):379-382. |
| APA | Wei, TB.,Ji, XL.,Wu, K.,Zheng, HY.,Du, CX.,...&Li, JM.(2014).Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.OPTICS LETTERS,39(2),379-382. |
| MLA | Wei, TB,et al."Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes".OPTICS LETTERS 39.2(2014):379-382. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Efficiency improveme（584KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment