| Crystal Quality Improvement of GeSn Alloys by Thermal Annealing | |
| Zhang, X; Zhang, DL; Cheng, BW; Liu, Z; Zhang, GZ; Xue, CL; Wang, QM | |
| 2014 | |
| Source Publication | ECS SOLID STATE LETTERS
 |
| Volume | 3Issue:10Pages:P127-P130 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26154 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Zhang, X,Zhang, DL,Cheng, BW,et al. Crystal Quality Improvement of GeSn Alloys by Thermal Annealing[J]. ECS SOLID STATE LETTERS,2014,3(10):P127-P130. |
| APA | Zhang, X.,Zhang, DL.,Cheng, BW.,Liu, Z.,Zhang, GZ.,...&Wang, QM.(2014).Crystal Quality Improvement of GeSn Alloys by Thermal Annealing.ECS SOLID STATE LETTERS,3(10),P127-P130. |
| MLA | Zhang, X,et al."Crystal Quality Improvement of GeSn Alloys by Thermal Annealing".ECS SOLID STATE LETTERS 3.10(2014):P127-P130. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Crystal Quality Impr（852KB） | 限制开放 | License | Application Full Text | |||
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