Significant quality improvement of GaN on Si upon formation of an AlN defective layer | |
Feng, YX; Wei, HY; Yang, SY; Zhang, H; Kong, SS; Zhao, GJ; Liu, XL | |
2014 | |
Source Publication | CRYSTENGCOMM
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Volume | 16Issue:32Pages:7525-7528 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2015-03-25 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/26149 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Feng, YX,Wei, HY,Yang, SY,et al. Significant quality improvement of GaN on Si upon formation of an AlN defective layer[J]. CRYSTENGCOMM,2014,16(32):7525-7528. |
APA | Feng, YX.,Wei, HY.,Yang, SY.,Zhang, H.,Kong, SS.,...&Liu, XL.(2014).Significant quality improvement of GaN on Si upon formation of an AlN defective layer.CRYSTENGCOMM,16(32),7525-7528. |
MLA | Feng, YX,et al."Significant quality improvement of GaN on Si upon formation of an AlN defective layer".CRYSTENGCOMM 16.32(2014):7525-7528. |
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