| Significant quality improvement of GaN on Si upon formation of an AlN defective layer | |
| Feng, YX; Wei, HY; Yang, SY; Zhang, H; Kong, SS; Zhao, GJ; Liu, XL | |
| 2014 | |
| Source Publication | CRYSTENGCOMM
 |
| Volume | 16Issue:32Pages:7525-7528 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2015-03-25 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/26149 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Feng, YX,Wei, HY,Yang, SY,et al. Significant quality improvement of GaN on Si upon formation of an AlN defective layer[J]. CRYSTENGCOMM,2014,16(32):7525-7528. |
| APA | Feng, YX.,Wei, HY.,Yang, SY.,Zhang, H.,Kong, SS.,...&Liu, XL.(2014).Significant quality improvement of GaN on Si upon formation of an AlN defective layer.CRYSTENGCOMM,16(32),7525-7528. |
| MLA | Feng, YX,et al."Significant quality improvement of GaN on Si upon formation of an AlN defective layer".CRYSTENGCOMM 16.32(2014):7525-7528. |
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| File Name/Size | DocType | Version | Access | License | ||
| Significant quality （1897KB） | 限制开放 | License | Application Full Text | |||
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