SEMI OpenIR  > 半导体超晶格国家重点实验室
Rapid thermal annealing on GaSb thin films grown by Molecular Beam Epitaxy on GaAs substrates
Rui Ting Hao; Jie Guo; Shu Kang Deng; Ying Liu; Yan Mei Miao; Ying Qiang Xu
2013
Source PublicationAdvanced Materials Research
Volume787Pages:143-147
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26144
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Rui Ting Hao,Jie Guo,Shu Kang Deng,et al. Rapid thermal annealing on GaSb thin films grown by Molecular Beam Epitaxy on GaAs substrates[J]. Advanced Materials Research,2013,787:143-147.
APA Rui Ting Hao,Jie Guo,Shu Kang Deng,Ying Liu,Yan Mei Miao,&Ying Qiang Xu.(2013).Rapid thermal annealing on GaSb thin films grown by Molecular Beam Epitaxy on GaAs substrates.Advanced Materials Research,787,143-147.
MLA Rui Ting Hao,et al."Rapid thermal annealing on GaSb thin films grown by Molecular Beam Epitaxy on GaAs substrates".Advanced Materials Research 787(2013):143-147.
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