SEMI OpenIR  > 半导体超晶格国家重点实验室
Suspended InAsnanowire gate-all-around field-effect transistors
Li, Q; Huang, SY; Pan, D; Wang, JY; Zhao, JH; Xu, HQ
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume105Issue:11Pages:113106
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26136
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li, Q,Huang, SY,Pan, D,et al. Suspended InAsnanowire gate-all-around field-effect transistors[J]. APPLIED PHYSICS LETTERS,2014,105(11):113106.
APA Li, Q,Huang, SY,Pan, D,Wang, JY,Zhao, JH,&Xu, HQ.(2014).Suspended InAsnanowire gate-all-around field-effect transistors.APPLIED PHYSICS LETTERS,105(11),113106.
MLA Li, Q,et al."Suspended InAsnanowire gate-all-around field-effect transistors".APPLIED PHYSICS LETTERS 105.11(2014):113106.
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