SEMI OpenIR  > 半导体超晶格国家重点实验室
Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence
Xing, JL; Zhang, Y; Liao, YP; Wang, J; Xiang, W; Hao, HY; Xu, YQ; Niu, ZC
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume116Issue:12Pages:123107
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26134
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xing, JL,Zhang, Y,Liao, YP,et al. Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence[J]. JOURNAL OF APPLIED PHYSICS,2014,116(12):123107.
APA Xing, JL.,Zhang, Y.,Liao, YP.,Wang, J.,Xiang, W.,...&Niu, ZC.(2014).Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence.JOURNAL OF APPLIED PHYSICS,116(12),123107.
MLA Xing, JL,et al."Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence".JOURNAL OF APPLIED PHYSICS 116.12(2014):123107.
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