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Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor
Wang, H; Han, WH; Li, XM; Zhang, YB; Yang, FH
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume116Issue:12Pages:124505
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26133
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Wang, H,Han, WH,Li, XM,et al. Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor[J]. JOURNAL OF APPLIED PHYSICS,2014,116(12):124505.
APA Wang, H,Han, WH,Li, XM,Zhang, YB,&Yang, FH.(2014).Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor.JOURNAL OF APPLIED PHYSICS,116(12),124505.
MLA Wang, H,et al."Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor".JOURNAL OF APPLIED PHYSICS 116.12(2014):124505.
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