SEMI OpenIR  > 纳米光电子实验室
Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector
Li, Q; Ma, WQ; Zhang, YH; Cui, K; Huang, JL; Wei, Y; Liu, K; Cao, YL; Wang, WY; Liu, YL; Jin, P
2014
Source PublicationCHINESE SCIENCE BULLETIN
Volume59Issue:28Pages:3696-3700
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26130
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Li, Q,Ma, WQ,Zhang, YH,et al. Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector[J]. CHINESE SCIENCE BULLETIN,2014,59(28):3696-3700.
APA Li, Q.,Ma, WQ.,Zhang, YH.,Cui, K.,Huang, JL.,...&Jin, P.(2014).Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector.CHINESE SCIENCE BULLETIN,59(28),3696-3700.
MLA Li, Q,et al."Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector".CHINESE SCIENCE BULLETIN 59.28(2014):3696-3700.
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