SEMI OpenIR  > 半导体超晶格国家重点实验室
Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector
Dong, Y; Wang, GL; Wang, HP; Ni, HQ; Chen, JH; Gao, FQ; Qiao, ZT; Yang, XH; Niu, ZC
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:10Pages:104209
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26119
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Dong, Y,Wang, GL,Wang, HP,et al. Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector[J]. CHINESE PHYSICS B,2014,23(10):104209.
APA Dong, Y.,Wang, GL.,Wang, HP.,Ni, HQ.,Chen, JH.,...&Niu, ZC.(2014).Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector.CHINESE PHYSICS B,23(10),104209.
MLA Dong, Y,et al."Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector".CHINESE PHYSICS B 23.10(2014):104209.
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